• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 83
  • IRFH5210TR2PBF
    MOSFET N-CH 100V 10A 5X6 PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc)
    • Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2570pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH5006TR2PBF
    MOSFET N-CH 60V 100A 5X6 PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4175pF @ 30V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH5015TR2PBF
    MOSFET N-CH 150V 10A 8VQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc)
    • Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 50V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH5206TRPBF
    MOSFET N-CH 60V 16A 8-PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFH5250TRPBF
    MOSFET N-CH 25V 45A 5X6 PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7174pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH7194TRPBF
    MOSFET N-CH 100V 11A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: FASTIRFET™, HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 16.4mOhm @ 21A, 10V
    • Vgs(th) (Max) @ Id: 3.6V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFH5303TRPBF
    MOSFET N-CH 30V 82A 8-PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 82A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 49A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH8202TRPBF
    MOSFET N-CH 25V 100A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7174pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH5250TR2PBF
    MOSFET N-CH 25V 45A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7174pF @ 13V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH5304TRPBF
    MOSFET N-CH 30V 22A 8VQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH5020TRPBF
    MOSFET N-CH 200V 5.1A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
    • Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFH7446TR2PBF
    MOSFET N CH 40V 85A PQFN 5X6
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3174pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH5020TR2PBF
    MOSFET N-CH 200V 5.1A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
    • Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 100V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH7914TRPBF
    MOSFET N-CH 30V 15A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH7440TRPBF
    MOSFET N-CH 40V 85A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4574pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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