• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 83
  • IRFH7934TR2PBF
    MOSFET N-CH 30V 24A 5X6 PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH7182TRPBF
    MOSFET NCH 100V 23A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: FASTIRFET™, HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 3.6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 4W (Ta), 195W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFH7882TRPBF
    MOSFET N-CH 80V 26A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: FASTIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-VQFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
    • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 3.6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3186pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 4W (Ta), 195W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRLH6224TRPBF
    MOSFET N-CH 20V 28A PQFN 5X6
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 105A (Tc)
    • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 52W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • IRFH8201TRPBF
    MOSFET N-CH 25V 100A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH7110TR2PBF
    MOSFET N CH 100V 11A PQFN5X6
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-TQFN Exposed Pad
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
    • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH7107TR2PBF
    MOSFET N-CH 75V 14A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH8303TRPBF
    MOSFET N-CH 30V 100A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 179nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 24V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.7W (Ta), 156W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH7936TRPBF
    MOSFET N-CH 30V 20A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH5250DTRPBF
    MOSFET N-CH 25V 40A 8VQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6115pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • AUIRFN8403TR
    MOSFET N-CH 40V 95A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3174pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 4.3W (Ta), 94W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFH7934TRPBF
    MOSFET N-CH 30V 24A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH4201TRPBF
    MOSFET N-CH 25V 49A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 49A (Ta)
    • Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2.1V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.5W (Ta), 156W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH5255TR2PBF
    MOSFET N-CH 25V 15A 8VQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc)
    • Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 988pF @ 13V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH5004TR2PBF
    MOSFET N-CH 40V 28A 8VQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 20V
    • Technology: MOSFET (Metal Oxide)
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