• Manufacturer: Infineon Technologies
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-5 Full Pack (Formed Leads)
• Supplier Device Package: TO-220-5 Full-Pak
• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V
• Power - Max: 18W (Tc)

• Manufacturer: Infineon Technologies
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-37260-2
• Frequency: 894MHz
• Voltage - Rated: 65V
• Current - Test: 1.95A
• Power - Output: 220W
• Transistor Type: LDMOS
• Gain: 18dB
• Voltage - Test: 30V
• Current Rating (Amps): 10µA

• Manufacturer: Infineon Technologies
• Series: CoolMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3-1
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 24.3A (Tc)
• Rds On (Max) @ Id, Vgs: 160mOhm @ 15.4A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 240W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: SIPMOS®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
• Rds On (Max) @ Id, Vgs: 1.8Ohm @ 680mA, 10V
• Vgs(th) (Max) @ Id: 2V @ 170µA
• Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.8W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: DirectFET™ Isometric MX
• Supplier Device Package: DIRECTFET™ MX
• FET Type: N-Channel
• FET Feature: Schottky Diode (Body)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc)
• Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 13V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Rds On (Max) @ Id, Vgs: 100mOhm @ 11A, 10V
• Vgs(th) (Max) @ Id: 4.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 100W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: IPAK (TO-251)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Rds On (Max) @ Id, Vgs: 8.4mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.55V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 48W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Rds On (Max) @ Id, Vgs: 37mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 57W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±16V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-PQFN (5x6)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
• Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 10V
• Technology: MOSFET (Metal Oxide)

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3-1
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
• Vgs(th) (Max) @ Id: 4V @ 230µA
• Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 300W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-3D
• Frequency: 800MHz
• Voltage - Rated: 8V
• Current - Test: 10mA
• Transistor Type: N-Channel
• Gain: 26dB
• Voltage - Test: 5V
• Noise Figure: 1.2dB
• Current Rating (Amps): 25mA

• Manufacturer: Infineon Technologies
• Series: CoolMOS™ CE
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
• Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 38W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.5W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs (Max): ±12V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 130W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: CoolMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
• Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5030pF @ 100V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 391W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V