Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Goford Semiconductor 8-DFN (3x3)

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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Found: 1
  • G33N03D3
    N30V,RD(MAX)<12M@10V,RD(MAX)<13M
    Goford Semiconductor
    • Manufacturer: Goford Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-DFN (3x3)
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
    • Rds On (Max) @ Id, Vgs: 12mOhm @ 18A, 10V
    • Vgs(th) (Max) @ Id: 1.1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V
    • Power - Max: 20W (Tc)
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