Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single GeneSiC Semiconductor TO-258

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
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Found: 1
  • GA50JT06-258
    TRANS SJT 600V 100A
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 225°C (TJ)
    • Package / Case: TO-258-3, TO-258AA
    • Supplier Device Package: TO-258
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 50A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 769W (Tc)
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