Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single GeneSiC Semiconductor TO-257

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 3
  • 2N7639-GA
    TRANS SJT 650V 15A TO-257
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 225°C (TJ)
    • Package / Case: TO-257-3
    • Supplier Device Package: TO-257
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Tc) (155°C)
    • Rds On (Max) @ Id, Vgs: 105mOhm @ 15A
    • Input Capacitance (Ciss) (Max) @ Vds: 1534pF @ 35V
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 172W (Tc)
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  • 2N7637-GA
    TRANS SJT 650V 7A TO-257
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 225°C (TJ)
    • Package / Case: TO-257-3
    • Supplier Device Package: TO-257
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 7A (Tc) (165°C)
    • Rds On (Max) @ Id, Vgs: 170mOhm @ 7A
    • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 80W (Tc)
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  • 2N7635-GA
    TRANS SJT 650V 4A TO-257
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 225°C (TJ)
    • Package / Case: TO-257-3
    • Supplier Device Package: TO-257
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (165°C)
    • Rds On (Max) @ Id, Vgs: 415mOhm @ 4A
    • Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 35V
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 47W (Tc)
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