Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single GeneSiC Semiconductor TO-247AB

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 10
  • GA16JT17-247
    TRANS SJT 1700V 16A TO-247AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C)
    • Rds On (Max) @ Id, Vgs: 110mOhm @ 16A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 282W (Tc)
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  • GA08JT17-247
    TRANS SJT 1700V 8A TO-247AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C)
    • Rds On (Max) @ Id, Vgs: 250mOhm @ 8A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 48W (Tc)
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  • GA20SICP12-247
    TRANS SJT 1200V 45A TO247
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 20A
    • Input Capacitance (Ciss) (Max) @ Vds: 3091pF @ 800V
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 282W (Tc)
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  • GA05JT12-247
    TRANS SJT 1200V 5A
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
    • Rds On (Max) @ Id, Vgs: 280mOhm @ 5A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 106W (Tc)
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  • GA03JT12-247
    TRANS SJT 1200V 3A TO-247AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 3A (Tc) (95°C)
    • Rds On (Max) @ Id, Vgs: 460mOhm @ 3A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 15W (Tc)
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  • GA06JT12-247
    TRANS SJT 1200V 6A TO-247AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Tc) (90°C)
    • Rds On (Max) @ Id, Vgs: 220mOhm @ 6A
    • Technology: SiC (Silicon Carbide Junction Transistor)
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  • GA10JT12-247
    TRANS SJT 1.2KV 10A
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
    • Rds On (Max) @ Id, Vgs: 140mOhm @ 10A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 170W (Tc)
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  • GA04JT17-247
    TRANS SJT 1700V 4A TO-247AB
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C)
    • Rds On (Max) @ Id, Vgs: 480mOhm @ 4A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 106W (Tc)
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  • GA20JT12-247
    TRANS SJT 1.2KV 20A
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
    • Rds On (Max) @ Id, Vgs: 70mOhm @ 20A
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 282W (Tc)
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  • GA50JT12-247
    TRANS SJT 1.2KV 50A
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 50A
    • Input Capacitance (Ciss) (Max) @ Vds: 7209pF @ 800V
    • Technology: SiC (Silicon Carbide Junction Transistor)
    • Power Dissipation (Max): 583W (Tc)
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