- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2N7636-GA | TRANS SJT 650V 4A TO276 | GeneSiC Semiconductor | TO-276 | Surface Mount | TO-276AA | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | 125W (Tc) | 650V | 4A (Tc) (165°C) | 415mOhm @ 4A | 324pF @ 35V |
| GA20JT12-263 | TRANS SJT 1200V 45A | GeneSiC Semiconductor | D2PAK (7-Lead) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 282W (Tc) | 1200V | 45A (Tc) | 60mOhm @ 20A | 3091pF @ 800V |
| 2N7637-GA | TRANS SJT 650V 7A TO-257 | GeneSiC Semiconductor | TO-257 | Through Hole | TO-257-3 | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | 80W (Tc) | 650V | 7A (Tc) (165°C) | 170mOhm @ 7A | 720pF @ 35V |
| GA05JT03-46 | TRANS SJT 300V 9A | GeneSiC Semiconductor | TO-46 | Through Hole | TO-46-3 | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | 20W (Tc) | 300V | 9A (Tc) | 240mOhm @ 5A | |
| GA50JT17-247 | TRANS SJT 1.7KV 100A | GeneSiC Semiconductor | TO-247 | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 583W (Tc) | 1700V | 100A (Tc) | 25mOhm @ 50A | |
| GA100SCPL12-227E | SIC PHASE LEG BRIDGE 100A 1.2KV | GeneSiC Semiconductor | ||||||||||
| GA10JT12-247 | TRANS SJT 1.2KV 10A | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 170W (Tc) | 1200V | 10A (Tc) | 140mOhm @ 10A | |
| GA04JT17-247 | TRANS SJT 1700V 4A TO-247AB | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 106W (Tc) | 1700V | 4A (Tc) (95°C) | 480mOhm @ 4A | |
| GA05JT12-263 | TRANS SJT 1200V 15A | GeneSiC Semiconductor | D2PAK (7-Lead) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 106W (Tc) | 1200V | 15A (Tc) | ||
| GA20JT12-247 | TRANS SJT 1.2KV 20A | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 282W (Tc) | 1200V | 20A (Tc) | 70mOhm @ 20A | |
| 2N7635-GA | TRANS SJT 650V 4A TO-257 | GeneSiC Semiconductor | TO-257 | Through Hole | TO-257-3 | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | 47W (Tc) | 650V | 4A (Tc) (165°C) | 415mOhm @ 4A | 324pF @ 35V |
| 2N7640-GA | TRANS SJT 650V 16A TO276 | GeneSiC Semiconductor | TO-276 | Surface Mount | TO-276AA | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | 330W (Tc) | 650V | 16A (Tc) (155°C) | 105mOhm @ 16A | 1534pF @ 35V |
| GA50JT12-247 | TRANS SJT 1.2KV 50A | GeneSiC Semiconductor | TO-247AB | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | 583W (Tc) | 1200V | 100A (Tc) | 25mOhm @ 50A | 7209pF @ 800V |
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