Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Freescale Semiconductor NI-780S-4L2L

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    • Operating Temperature
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    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
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Found: 1
  • A2T26H160-24SR3
    RF POWER FIELD-EFFECT TRANSISTOR
    Freescale Semiconductor
    • Manufacturer: Freescale Semiconductor
    • Package / Case: NI-780S-4L2L
    • Supplier Device Package: NI-780S-4L2L
    • Frequency: 2.58GHz
    • Voltage - Rated: 65V
    • Current - Test: 350mA
    • Power - Output: 28W
    • Transistor Type: LDMOS (Dual)
    • Gain: 15.5dB
    • Voltage - Test: 28V
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