- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
MRF7S19170HSR3 | RF L BAND, N-CHANNEL | Freescale Semiconductor | NI-880S | 50W | 1.99GHz | 65V | NI-880S | LDMOS | 17.2dB | 28V | 1.4A | |
MRF6V2150NBR5 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | TO-272 WB-4 | 150W | 220MHz | 110V | TO-272BB | LDMOS | 25dB | 50V | 450mA | |
MRF7S21080HSR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S | 22W | 2.11GHz ~ 2.17GHz | 65V | 10µA | NI-780S | LDMOS | 18dB | 28V | 800mA |
MRF5S4140HR3 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-780H-2L | 28W | 465MHz | 65V | SOT-957A | LDMOS | 21dB | 28V | 1.25A | |
MRFG35003NT1 | RF S BAND, GALLIUM ARSENIDE, N-C | Freescale Semiconductor | PLD-1.5 | 3W | 1.8GHz ~ 3.6GHz | 15V | 1.3A | PLD-1.5 | pHEMT FET | 11.5dB | 12V | 55mA |
MRFG35010AR5 | RF POWER N-CHANNEL, MOSFET | Freescale Semiconductor | NI-360HF | 1W | 3.55GHz | 15V | NI-360HF | pHEMT FET | 10dB | 12V | 140mA | |
MHT1008NT1 | RF POWER FIELD-EFFECT TRANSISTOR | Freescale Semiconductor | ||||||||||
MRF7S21110HR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-780H-2L | 33W | 2.17GHz | 65V | SOT-957A | LDMOS | 17.3dB | 28V | 1.1A | |
MRFE6S9135HSR3 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-880S | 39W | 1GHz | 66V | 10µA | NI-880S | LDMOS | 21dB | 28V | 1A |
MRF6V2300NR1 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | TO-272 WB-4 | 300W | 600MHz | 110V | 2.5mA | TO-272BB | LDMOS | 25.5dB | 50V | 900mA |
MRF6VP3450HSR5 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | NI-1230-4S | 450W | 470MHz ~ 860MHz | 110V | 10µA | NI-1230-4S | LDMOS (Dual) | 22.5dB | 50V | 1.4A |
MRF8P20160HSR3 | RF 2-ELEMENT, L BAND, N-CHANNEL | Freescale Semiconductor | NI-780S-4 | 37W | 1.92GHz | 65V | NI-780S-4 | LDMOS (Dual) | 16.5dB | 28V | 550mA | |
AFT18H357-24NR6 | AIRFAST RF POWER LDMOS TRANSISTO | Freescale Semiconductor | OM-1230-4L2L | 63W | 1.81GHz | 65V | OM-1230-4L2L | LDMOS (Dual) | 17.5dB | 28V | 800mA | |
MRF7S19100NR1 | RF L BAND, N-CHANNEL , TO-270 | Freescale Semiconductor | TO-270 WB-4 | 29W | 1.93GHz ~ 1.99GHz | 65V | TO-270AB | LDMOS | 17.5dB | 28V | 1A | |
MRF9060NR1 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | TO-270-2 | 60W | 945MHz | 65V | TO-270AA | LDMOS | 18dB | 26V | 450mA |
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