- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
MRF6S19100HR3 | RF L BAND, N-CHANNEL | Freescale Semiconductor | NI-780H-2L | 22W | 1.99GHz | 68V | SOT-957A | LDMOS | 16.1dB | 28V | 900mA | |
MRF1570FT1 | RF 2-ELEMENT, ULTRA HIGH FREQUE | Freescale Semiconductor | TO-272-8 | 70W | 470MHz | 40V | 1µA | TO-272-8 | N-Channel | 10dB | 12.5V | 800mA |
AFV09P350-04GNR3 | RF POWER FIELD-EFFECT TRANSISTOR | Freescale Semiconductor | OM-780G-4L | 100W | 920MHz | 105V | OM-780G-4L | LDMOS (Dual) | 19.5dB | 48V | 860mA | |
MRF24300NR3 | RF POWER LDMOS TRANSISTOR | Freescale Semiconductor | OM-780-2 | 330W | 2.45GHz | 65V | OM-780-2 | LDMOS | 13.1dB | 32V | 100mA | |
MRFE6S9046GNR1 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | TO-270 WB-4 Gull | 35.5W | 920MHz ~ 960MHz | 66V | 10µA | TO-270BB | LDMOS | 19dB | 28V | 300mA |
MRF5S19060NBR1 | RF L BAND, N-CHANNEL , TO-272 | Freescale Semiconductor | TO-272 WB-4 | 12W | 1.99GHz | 65V | TO-272BB | LDMOS | 14dB | 28V | 750mA | |
MRF8P18265HSR5 | POWER, N-CHANNEL, MOSFET | Freescale Semiconductor | NI1230S-8 | 72W | 1.88GHz | 65V | SOT-1110B | LDMOS | 16dB | 30V | 800mA | |
MRF8S21100HSR3 | RF S BAND, N-CHANNEL | Freescale Semiconductor | NI-780S | 24W | 2.11GHz ~ 2.17GHz | 65V | 10µA | NI-780S | LDMOS | 18.3dB | 28V | 700mA |
MRF9030GNR1 | FET RF TO-270-2 GW | Freescale Semiconductor | TO-270-2 GULL | TO-270BA | LDMOS | |||||||
MRF6S21060NBR1 | RF S BAND, N-CHANNEL POWER MOSFE | Freescale Semiconductor | ||||||||||
MRF7S38010HSR5 | FET RF 65V 3.6GHZ NI-400S | Freescale Semiconductor | NI-400S-2S | 2W | 3.4GHz ~ 3.6GHz | 65V | NI-400S-2S | LDMOS | 15dB | 30V | 160mA | |
MRF8S9202NR3 | RF ULTRA HIGH FREQUENCY BAND, N- | Freescale Semiconductor | OM-780-2 | 58W | 920MHz | 70V | OM-780-2 | LDMOS | 19dB | 28V | 1.3A | |
MRF8S23120HR5 | POWER, N-CHANNEL, MOSFET | Freescale Semiconductor | NI-780H-2L | 28W | 2.3GHz | 65V | SOT-957A | LDMOS | 16dB | 28V | 800mA | |
MRF7S24250NR3 | RF POWER FIELD-EFFECT TRANSISTOR | Freescale Semiconductor | OM-780-2 | 256W | 2.45GHz | 65V | OM-780-2 | LDMOS | 14.7dB | 30V | 100mA | |
MRF6S19200HR5 | FET RF 66V 1.99GHZ NI780 | Freescale Semiconductor | NI-780H-2L | 56W | 1.93GHz ~ 1.99GHz | 66V | SOT-957A | LDMOS | 17.9dB | 28V | 1.6A |
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