Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Fairchild Semiconductor EPM15

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 3
  • FD6M043N08
    N-CHANNEL POWER MOSFET
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Series: Power-SPM™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: EPM15
    • Supplier Device Package: EPM15
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 65A
    • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V
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  • FD6M045N06
    N-CHANNEL POWER MOSFET
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Series: Power-SPM™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: EPM15
    • Supplier Device Package: EPM15
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 60A
    • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 25V
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  • FD6M033N06
    N-CHANNEL POWER MOSFET
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Series: Power-SPM™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: EPM15
    • Supplier Device Package: EPM15
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 73A
    • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6010pF @ 25V
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  • 10
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  • 100