- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Operating Temperature
|
FET Type
|
Gain
|
Noise Figure
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FD6M043N08 | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | EPM15 | Through Hole | EPM15 | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 75V | 65A | Standard | 4.3mOhm @ 40A, 10V | 4V @ 250µA | 148nC @ 10V | 6180pF @ 25V | Power-SPM™ | |||||||||
FDB3652SB82059 | 1-ELEMENT, N-CHANNEL | Fairchild Semiconductor | ||||||||||||||||||||||
FDC655N | N-CHANNEL, MOSFET | Fairchild Semiconductor | ||||||||||||||||||||||
FDMD82100 | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 12-Power3.3x5 | 1W | Surface Mount | 12-PowerWDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 100V | 7A | Standard | 19mOhm @ 7A, 10V | 4V @ 250µA | 17nC @ 10V | 1070pF @ 50V | PowerTrench® | ||||||||
FDR8702H | SMALL SIGNAL P-CHANNEL MOSFET | Fairchild Semiconductor | SuperSOT™-8 | 800mW | Surface Mount | 8-TSOP (0.130", 3.30mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 3.6A, 2.6A | Logic Level Gate | 38mOhm @ 3.6A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 650pF @ 10V | PowerTrench® | ||||||||
FDS4897C | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 40V | 6.2A, 4.4A | Logic Level Gate | 29mOhm @ 6.2A, 10V | 3V @ 250µA | 20nC @ 10V | 760pF @ 20V | PowerTrench® | ||||||||
FDMD8900 | POWER FIELD-EFFECT TRANSISTOR, N | Fairchild Semiconductor | 12-Power3.3x5 | 2.1W | Surface Mount | 12-PowerWDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 19A, 17A | Standard | 4mOhm @ 19A, 10V | 2.5V @ 250µA | 35nC @ 10V | 2605pF @ 15V | |||||||||
NVMD3P03R2G | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | 8-SOIC | 730mW (Ta) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 2.34A (Tj) | Standard | 85mOhm @ 3.05A, 10V | 2.5V @ 250µA | 25nC @ 10V | 750pF @ 24V | |||||||||
NDS9933A | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 2.8A | Logic Level Gate | 140mOhm @ 2.8A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | 405pF @ 10V | |||||||||
SI6955DQ | P-CHANNEL MOSFET | Fairchild Semiconductor | 8-TSSOP | 1W (Ta) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 2.5A (Ta) | Standard | 85mOhm @ 2.5A, 10V | 3V @ 250µA | 15nC @ 10V | 298pF @ 10V | PowerTrench® | ||||||||
FDD8424H-F085A | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | TO-252-4 | 1.3W | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | -55°C ~ 150°C (TJ) | N and P-Channel | 40V | 9A, 6.5A | Logic Level Gate | 24mOhm @ 9A, 10V | 3V @ 250µA | 20nC @ 10V | 1000pF @ 20V | PowerTrench® | ||||||||
SI4953DY | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW (Ta) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 4.9A (Ta) | 53mOhm @ 4.9A, 10V | 1V @ 250µA | 25nC @ 10V | 750pF @ 15V | ||||||||||
FDML7610AS | 2-ELEMENT, N-CHANNEL, MOSFET | Fairchild Semiconductor | ||||||||||||||||||||||
FDS8934A | P-CHANNEL POWER MOSFET | Fairchild Semiconductor | 8-SOIC | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 4A | Logic Level Gate | 55mOhm @ 4A, 4.5V | 1V @ 250µA | 28nC @ 5V | 1130pF @ 10V | |||||||||
FDZ2553NZ | N-CHANNEL POWER MOSFET | Fairchild Semiconductor | 18-BGA (2.5x4) | 2.1W | Surface Mount | 18-WFBGA | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 9.6A | Logic Level Gate | 14mOhm @ 9.6A, 4.5V | 1.5V @ 250µA | 18nC @ 5V | 1240pF @ 10V | PowerTrench® |
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