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    • Current - Continuous Drain (Id) @ 25°C
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    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
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List Table
Found: 1
  • EPC2012C
    GANFET TRANS 200V 5A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die Outline (4-Solder Bar)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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