Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Comchip Technology DFN5x6 (PR-PAK)

Found: 3
  • MOSFET P-CH 60VDS 20VGS 64A DFN5
    Comchip Technology
    • Manufacturer: Comchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: DFN5x6 (PR-PAK)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
    • Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1256pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta), 25W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 40VDS 20VGS 70A DFN5
    Comchip Technology
    • Manufacturer: Comchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: DFN5x6 (PR-PAK)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1278pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta), 72.3W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • MOSFET P-CH 30VDS 20VGS 150A DFN
    Comchip Technology
    • Manufacturer: Comchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: DFN5x6 (PR-PAK)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 45A (Tc)
    • Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2215pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta), 45W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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