Found: 6
  • MOSFET N-CH 40VDS 20VGS 35A PDFN
    Comchip Technology
    • Manufacturer: Comchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerWDFN
    • Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta), 44W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 20VDS 30VGS 25A PDFN
    Comchip Technology
    • Manufacturer: Comchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerWDFN
    • Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
    • Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.7W (Ta), 20W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 100VDS 20VGS 6.8A PD
    Comchip Technology
    • Manufacturer: Comchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerWDFN
    • Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
    • Rds On (Max) @ Id, Vgs: 105mOhm @ 6A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 26.2nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.7W (Ta), 10.4W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • MOSFET P-CH -30VDS 20VGS -7.7A P
    Comchip Technology
    • Manufacturer: Comchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerWDFN
    • Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 32A (Tc)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.6W (Ta), 29W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 30VDS 20VGS 25A PDFN
    Comchip Technology
    • Manufacturer: Comchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C
    • Package / Case: 8-PowerWDFN
    • Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)
    • FET Type: 2 N-Channel (Dual)
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 25A
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 15V
    • Power - Max: 1.7W (Ta), 20.8W (Tc)
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  • MOSFET N-CH 30VDS 20VGS 25A PDFN
    Comchip Technology
    • Manufacturer: Comchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerWDFN
    • Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 19A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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