- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Comchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
- Rds On (Max) @ Id, Vgs: 105mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.7W (Ta), 10.4W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Comchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 32A (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.6W (Ta), 29W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Comchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)
- FET Type: 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25A
- Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 15V
- Power - Max: 1.7W (Ta), 20.8W (Tc)
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- Manufacturer: Comchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Comchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: 150°C
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: CSPB1313-4
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 22V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
- Power - Max: 1.4W (Ta)
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- Manufacturer: Comchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: 150°C
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: CSPB2718-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 10V
- Power - Max: 2W (Ta)
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- Manufacturer: Comchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerTDFN
- Supplier Device Package: DFN5x6 (PR-PAK)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1278pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2W (Ta), 72.3W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Comchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Comchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 34A (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2W (Ta), 34W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Comchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerTDFN
- Supplier Device Package: DFN5x6 (PR-PAK)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 45A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2215pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2W (Ta), 45W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Comchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 6.3A (Ta)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 36mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Power - Max: 1.5W (Ta)
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