• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 2
  • NE3516S02-T1C-A
    IC HJ-FET RF N-CH S02 4-MICROX
    CEL
    • Manufacturer: CEL
    • Package / Case: 4-SMD, Flat Leads
    • Supplier Device Package: S02
    • Frequency: 12GHz
    • Voltage - Rated: 4V
    • Current - Test: 10mA
    • Power - Output: 165mW
    • Transistor Type: N-Channel GaAs HJ-FET
    • Gain: 14dB
    • Voltage - Test: 2V
    • Noise Figure: 0.35dB
    • Current Rating (Amps): 60mA
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • NE3516S02-A
    IC HJ-FET RF N-CH S02 4-MICROX
    CEL
    • Manufacturer: CEL
    • Package / Case: 4-SMD, Flat Leads
    • Supplier Device Package: S02
    • Frequency: 12GHz
    • Voltage - Rated: 4V
    • Current - Test: 10mA
    • Power - Output: 165mW
    • Transistor Type: N-Channel GaAs HJ-FET
    • Gain: 14dB
    • Voltage - Test: 2V
    • Noise Figure: 0.35dB
    • Current Rating (Amps): 60mA
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100