Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Alpha & Omega Semiconductor Inc. 8-SO
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 20V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 20V
- Vgs (Max): ±25V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 516pF @ 20V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs (Max): ±12V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.7W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2007pF @ 30V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1128pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs (Max): ±12V
Info from the market- Total warehouses:
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs (Max): ±12V
Info from the market- Total warehouses:
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-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 516pF @ 20V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 20V
- Vgs (Max): ±25V
Info from the market- Total warehouses:
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-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
- Rds On (Max) @ Id, Vgs: 5.3mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2007pF @ 30V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Offers in stock:
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