Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Alpha & Omega Semiconductor Inc. 6-DFN-EP (2x2)
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs (Max): ±8V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 782pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs (Max): ±12V
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-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: P-Channel
- FET Feature: Schottky Diode (Isolated)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Rds On (Max) @ Id, Vgs: 117mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs (Max): ±12V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs (Max): ±8V
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 6V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs (Max): ±8V
Info from the market- Total warehouses:
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-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 426pF @ 30V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 2.5V
- Vgs(th) (Max) @ Id: 650mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 4V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
- Vgs (Max): ±5V
Info from the market- Total warehouses:
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-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
- Rds On (Max) @ Id, Vgs: 37.5mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 746pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs (Max): ±12V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 552pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: P-Channel
- FET Feature: Schottky Diode (Body)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Rds On (Max) @ Id, Vgs: 108mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.5W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: P-Channel
- FET Feature: Schottky Diode (Isolated)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.5W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 813pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs (Max): ±12V
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- Offers in stock:
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