Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Alpha & Omega Semiconductor Inc. 4-WLCSP (1.57x1.57)

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 3
  • AOC2802
    MOSFET 2N-CH 4WLCSP
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-UFBGA, WLCSP
    • Supplier Device Package: 4-WLCSP (1.57x1.57)
    • FET Type: 2 N-Channel (Dual) Common Drain
    • FET Feature: Logic Level Gate
    • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
    • Power - Max: 1.3W
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  • AOC2800
    MOSFET 2N-CH 4WLCSP
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-UFBGA, WLCSP
    • Supplier Device Package: 4-WLCSP (1.57x1.57)
    • FET Type: 2 N-Channel (Dual) Common Drain
    • FET Feature: Logic Level Gate
    • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
    • Power - Max: 1.3W
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  • AOC2802_001
    MOSFET 2N-CH 4WLCSP
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-UFBGA, WLCSP
    • Supplier Device Package: 4-WLCSP (1.57x1.57)
    • FET Type: 2 N-Channel (Dual) Common Drain
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 6A
    • Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
    • Power - Max: 1.3W
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  • 10
  • 15
  • 50
  • 100