Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Alpha & Omega Semiconductor Inc. 4-AlphaDFN (0.97x0.97)

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 5
  • AOC2423
    MOSFET P-CH 20V 2A 4WLCSP
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-SMD, No Lead
    • Supplier Device Package: 4-AlphaDFN (0.97x0.97)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
    • Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 600mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
    • Vgs (Max): ±12V
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  • AOC2422
    MOSFET N-CH 8V 3.5A 4WLCSP
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-SMD, No Lead
    • Supplier Device Package: 4-AlphaDFN (0.97x0.97)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 8V
    • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 33mOhm @ 1.5A, 2.5V
    • Vgs(th) (Max) @ Id: 800mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 4V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 600mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
    • Vgs (Max): ±5V
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  • AOC2403
    MOSFET P-CH 20V 1.8A 4WLCSP
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-SMD, No Lead
    • Supplier Device Package: 4-AlphaDFN (0.97x0.97)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
    • Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 450mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
    • Vgs (Max): ±8V
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  • AOCA32112E
    20V COMMON-DRAIN DUAL N-CHANNEL
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-SMD, No Lead
    • Supplier Device Package: 4-AlphaDFN (0.97x0.97)
    • FET Type: 2 N-Channel (Dual) Common Drain
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
    • Vgs(th) (Max) @ Id: 1.3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
    • Power - Max: 1.1W (Ta)
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  • AOC2421
    MOSFET P-CH 8V 2.5A 4WLCSP
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 4-SMD, No Lead
    • Supplier Device Package: 4-AlphaDFN (0.97x0.97)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 8V
    • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 62mOhm @ 1.5A, 2.5V
    • Vgs(th) (Max) @ Id: 700mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 4V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 600mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
    • Vgs (Max): ±5V
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