• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
Found: 1816
  • MOSFET N-CH 600V 12A TO262
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: TO-262
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 278W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET N-CH 30V 1.7A SC70-3
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SC-70-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
    • Vgs(th) (Max) @ Id: 1.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 4.82nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 350mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
    • Vgs (Max): ±12V
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  • MOSFET N-CH 600V 11A TO252
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: aMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252, (D-Pak)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
    • Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
    • Vgs(th) (Max) @ Id: 4.1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 208W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET NCH 150V 106A TO220
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 106A (Tc)
    • Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 5.1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3010pF @ 75V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 650V 11A TO262
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: aMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: TO-262
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
    • Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 198W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET N-CH 80V 13A TO263
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263 (D²Pak)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 70A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 3.3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3142pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 30V 16A
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: AlphaMOS
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252, (D-Pak)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 46A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1187pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 900V 9A TO220F
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220-3F
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 50W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET N-CH 30V 36A 8DFN
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: AlphaMOS
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerSMD, Flat Leads
    • Supplier Device Package: 8-DFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 36A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5W (Ta), 39W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±12V
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  • MOSFET 2N-CH 100V 4A 8SOIC
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 4A
    • Rds On (Max) @ Id, Vgs: 68mOhm @ 4A, 10V
    • Vgs(th) (Max) @ Id: 2.8V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V
    • Power - Max: 2W
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  • MOSFET N-CH 100V 58A TO220F
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220-3F
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.1W (Ta), 41W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MOSFET P-CH 30V 10.5A 8SOIC
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 20V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 20V
    • Vgs (Max): ±25V
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  • MOSFET N-CH 500V 12A TO-220F
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220-3F
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1477pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 43W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET 2N-CH 20V 7A 8-TSSOP
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: 2 N-Channel (Dual) Common Drain
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 7A
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 10V
    • Power - Max: 1.5W
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  • 600V A MOS5TM N-CHANNEL POWER TR
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263 (D2Pak)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
    • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
    • Vgs(th) (Max) @ Id: 4.6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 208W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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