- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D²Pak)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 100V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 463W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 782pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs (Max): ±12V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Package / Case: 8-PowerSMD, Flat Leads
- Supplier Device Package: 8-DFN (5x6)
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D²Pak)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc)
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 20V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.9W (Ta), 176W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerSMD, Flat Leads
- Supplier Device Package: 8-DFN (5x6)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.9W (Ta), 31W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-4
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Rds On (Max) @ Id, Vgs: 63mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 75V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 4.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: 3-PowerSMD, Flat Leads
- Supplier Device Package: UltraSO-8™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 49A (Tc)
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
- Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 245W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-251-3 Stub Leads, IPak
- Supplier Device Package: TO-251A
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±25V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Series: aMOS™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D²Pak)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1294pF @ 100V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 357W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 7.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
- Power - Max: 2.3W
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 20V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 20V
- Vgs (Max): ±25V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220-3F
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Rds On (Max) @ Id, Vgs: 980mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 50W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerSMD, Flat Leads
- Supplier Device Package: 8-DFN (5x6)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 150A (Tc)
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 7.4W (Ta), 83W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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