• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D²Pak)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 140A (Tc)
• Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3690pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-DFN (5x6)
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17A, 33A
• Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
• Power - Max: 3.6W, 4.3W

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
• Rds On (Max) @ Id, Vgs: 14mOhm @ 11.6A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 3.1W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Series: AlphaSGT™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 3-PowerSMD, Flat Leads
• Supplier Device Package: UltraSO-8™
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
• Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 50V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC
• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A
• Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 2.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
• Power - Max: 2W

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252, (D-Pak)
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
• Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.5W (Ta), 71W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±25V

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: SC-74, SOT-457
• Supplier Device Package: 6-TSOP
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
• Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.2W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220-3F
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
• Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 38W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±30V

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252, (D-Pak)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC
• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 6A, 5A
• Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
• Power - Max: 2W

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70-3
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
• Rds On (Max) @ Id, Vgs: 113mOhm @ 1.4A, 10V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 350mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs (Max): ±12V

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252, (D-Pak)

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-DFN-EP (3x3)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 20A (Tc)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.7W (Ta), 20W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Alpha & Omega Semiconductor Inc.
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-262-3 Full Pack, I²Pak
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 28W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±30V