- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Through Hole
- Operating Temperature: -50°C ~ 175°C (TJ)
- Package / Case: TO-251-3 Stub Leads, IPak
- Supplier Device Package: TO-251A
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
- Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 150W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Series: aMOS™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-262-3 Full Pack, I²Pak
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 717pF @ 100V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 27.8W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-DFN (3x2)
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.4A
- Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
- Power - Max: 1.9W
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Series: AlphaMOS
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-DFN (3x3)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc)
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta), 32W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs (Max): ±12V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-DFN (3x2)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.5W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc)
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 951pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-DFN (3x3)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 32A (Tc)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta), 62.5W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-251-3 Stub Leads, IPak
- Supplier Device Package: TO-251A
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc)
- Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1187pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs (Max): ±8V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-DFN (5x6)
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A, 30A
- Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
- Power - Max: 3.6W, 4.3W
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Series: AlphaMOS
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.5W (Ta), 53W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
- FET Type: P-Channel
- FET Feature: Schottky Diode (Isolated)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 952pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs (Max): ±12V
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