• Manufacturer: Diodes Incorporated
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 200°C (TJ)
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 175MHz

• Manufacturer: Panjit International Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Power - Max: 330mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: Toshiba Semiconductor and Storage
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD
• Power - Max: 900mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 150V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• Frequency - Transition: 400MHz

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: SC-89, SOT-490
• Supplier Device Package: SC-89-3
• Power - Max: 300mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 350MHz

• Manufacturer: Microchip Technology

• Manufacturer: Linear Integrated Systems, Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC
• Power - Max: 500mW
• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 10mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 200pA (ICBO)
• Frequency - Transition: 200MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
• Current - Collector Cutoff (Max): 50nA (ICBO)

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126-3
• Power - Max: 1.25W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: Microchip Technology

• Manufacturer: NXP USA Inc.

• Manufacturer: Nexperia USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB
• Power - Max: 400mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 220MHz

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5
• Power - Max: 800mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 250V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
• Current - Collector Cutoff (Max): 2µA

• Manufacturer: onsemi