• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• Power - Max: 250W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 30A
• Voltage - Collector Emitter Breakdown (Max): 450V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 3A, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4A, 20A
• Current - Collector Cutoff (Max): 100µA
• Frequency - Transition: 13MHz

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/301
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: UB
• Power - Max: 200mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 15V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 1µA (ICBO)

• Manufacturer: Panasonic Electronic Components
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-89, SOT-490
• Supplier Device Package: SSMini3-F3-B
• Power - Max: 125mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100µA
• Frequency - Transition: 150MHz

• Manufacturer: Microchip Technology

• Manufacturer: Microsemi Corporation
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 175V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA

• Manufacturer: Diodes Incorporated

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: Diotec Semiconductor
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3 (TO-236)
• Power - Max: 250mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: TT Electronics/Optek Technology
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 4-CLCC
• Supplier Device Package: 4-CLCC (5.59x3.81)
• Power - Max: 500mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
• Current - Collector Cutoff (Max): 10nA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: SOT-963
• Supplier Device Package: SOT-963
• Power - Max: 350mW
• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Frequency - Transition: 200MHz, 250MHz

• Manufacturer: onsemi

• Manufacturer: STMicroelectronics
• Mounting Type: Through Hole
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: SOT-32-3
• Power - Max: 40W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 400V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
• Current - Collector Cutoff (Max): 1mA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3
• Power - Max: 80W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 12A
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
• Current - Collector Cutoff (Max): 1mA

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26
• Power - Max: 1.1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 350mA, 3.5A
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 90MHz

• Manufacturer: Renesas Electronics America Inc