- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
- Power - Max: 400mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
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- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 50W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100µA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-92 (TO-226)
- Power - Max: 830mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Frequency - Transition: 60MHz
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- Manufacturer: NXP USA Inc.
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: Renesas Electronics America Inc
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: onsemi
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- Manufacturer: Microchip Technology
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: -50°C ~ 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-3
- Power - Max: 50W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- Frequency - Transition: 30MHz
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-3
- Power - Max: 50W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
- Frequency - Transition: 4MHz
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- Manufacturer: onsemi
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/394
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 70V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
- Current - Collector Cutoff (Max): 10µA
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/534
- Mounting Type: Stud Mount
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-210AA, TO-59-4, Stud
- Supplier Device Package: TO-59
- Power - Max: 2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50 µA
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
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- Manufacturer: Rochester Electronics, LLC
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- Offers in stock:
- 10
- 15
- 50
- 100