• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/349
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: U4
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 µA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
• Current - Collector Cutoff (Max): 1µA

• Manufacturer: Diodes Incorporated
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 200°C (TJ)
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)
• Power - Max: 1.2W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3.5A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
• Vce Saturation (Max) @ Ib, Ic: 330mV @ 400mA, 4A
• Current - Collector Cutoff (Max): 50nA (ICBO)
• Frequency - Transition: 125MHz

• Manufacturer: Micro Commercial Co
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 1.8V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 40MHz

• Manufacturer: Nexperia USA Inc.

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 4V
• Vce Saturation (Max) @ Ib, Ic: 750mV @ 20mA, 200mA
• Current - Collector Cutoff (Max): 5µA (ICBO)

• Manufacturer: NXP USA Inc.
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 830mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 100MHz

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10nA (ICBO)
• Frequency - Transition: 300MHz

• Manufacturer: onsemi

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3
• Power - Max: 1W
• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 120V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 1A, 5V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2mA, 2A
• Current - Collector Cutoff (Max): 10µA
• Frequency - Transition: 160MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 350mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• Frequency - Transition: 150MHz

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/421
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 6-SMD, No Lead
• Supplier Device Package: 6-SMD
• Transistor Type: NPN, PNP
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
• Current - Collector Cutoff (Max): 10µA (ICBO)

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: Panasonic Electronic Components
• Mounting Type: Surface Mount
• Operating Temperature: 125°C (TJ)
• Package / Case: SC-89, SOT-490
• Supplier Device Package: SSMini3-F1
• Power - Max: 125mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 20mA
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: 200MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
• Supplier Device Package: TO-92 (TO-226)
• Power - Max: 625mW
• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 500nA

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/370
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 200°C (TJ)
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-3 (TO-204AA)
• Power - Max: 6W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 140V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A