• Manufacturer: Bourns Inc.
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220
• Power - Max: 2W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 8A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 50mA, 5A
• Current - Collector Cutoff (Max): 500µA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• Power - Max: 750mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 160MHz

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: Microchip Technology

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 500mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: onsemi

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Power - Max: 350mW
• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 125MHz

• Manufacturer: Microchip Technology

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92 (TO-226)
• Power - Max: 625mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 25V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA

• Manufacturer: Nexperia USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-74, SOT-457
• Supplier Device Package: 6-TSOP
• Power - Max: 1.1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 345 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 515mV @ 600mA, 6A
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 140MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-204 (TO-3)
• Power - Max: 250W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 16A
• Voltage - Collector Emitter Breakdown (Max): 250V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
• Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
• Current - Collector Cutoff (Max): 500µA
• Frequency - Transition: 4MHz

• Manufacturer: Microsemi Corporation
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39 (TO-205AD)
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 300mA
• Voltage - Collector Emitter Breakdown (Max): 150V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
• Current - Collector Cutoff (Max): 10µA (ICBO)

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/559
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 14-DIP (0.300", 7.62mm)
• Supplier Device Package: TO-116
• Power - Max: 1.5W
• Transistor Type: 4 NPN (Quad)
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)

• Manufacturer: Microchip Technology

• Manufacturer: Micro Commercial Co
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
• Supplier Device Package: TO-92S
• Power - Max: 400mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 6V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 80MHz