• Manufacturer: Micro Commercial Co
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126
• Power - Max: 1.25W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: 50MHz

• Manufacturer: Panasonic Electronic Components
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SMINI6-G1
• Power - Max: 150mW
• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100µA
• Frequency - Transition: 150MHz

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/355
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6
• Power - Max: 350mW
• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-WDFN (2x2)
• Power - Max: 2.27W
• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 155MHz

• Manufacturer: Nexperia USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB
• Power - Max: 250mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• Frequency - Transition: 250MHz

• Manufacturer: Infineon Technologies
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323
• Power - Max: 250mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• Frequency - Transition: 250MHz

• Manufacturer: Rohm Semiconductor
• Series: Automotive, AEC-Q101
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMT3
• Power - Max: 200mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• Frequency - Transition: 200MHz

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/454
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 200V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
• Current - Collector Cutoff (Max): 200nA

• Manufacturer: Diodes Incorporated

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 150MHz

• Manufacturer: Fairchild Semiconductor
• Series: SOT-23
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Power - Max: 200mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 2nA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
• Current - Collector Cutoff (Max): 10nA (ICBO)

• Manufacturer: Fairchild Semiconductor
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F-3
• Power - Max: 75W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 400V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 800mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
• Current - Collector Cutoff (Max): 10µA (ICBO)

• Manufacturer: Rochester Electronics, LLC