• Manufacturer: Microsemi Corporation
• Series: Military, MIL-PRF-19500/391
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39
• Power - Max: 800mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10nA

• Manufacturer: Nexperia USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223
• Power - Max: 960mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 180MHz

• Manufacturer: Panasonic Electronic Components
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92L-A1
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 25V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz

• Manufacturer: Nexperia USA Inc.

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/349
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: U4
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 µA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
• Current - Collector Cutoff (Max): 1µA

• Manufacturer: onsemi

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
• Current - Collector Cutoff (Max): 50nA (ICBO)

• Manufacturer: Microchip Technology

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220
• Power - Max: 40W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 7A
• Voltage - Collector Emitter Breakdown (Max): 70V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
• Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
• Current - Collector Cutoff (Max): 1mA
• Frequency - Transition: 4MHz

• Manufacturer: Microsemi Corporation

• Manufacturer: onsemi

• Manufacturer: Fairchild Semiconductor
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Power - Max: 350mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• Frequency - Transition: 40MHz

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/354
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 4-SMD, No Lead
• Supplier Device Package: UB
• Power - Max: 400mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 10nA

• Manufacturer: Infineon Technologies
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23
• Power - Max: 330mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• Frequency - Transition: 250MHz

• Manufacturer: Fairchild Semiconductor
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 350V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max): 250nA (ICBO)
• Frequency - Transition: 50MHz