• Manufacturer: Rochester Electronics, LLC

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: UB
• Power - Max: 200mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 15V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 1µA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126
• Power - Max: 1.5W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
• Current - Collector Cutoff (Max): 1mA
• Frequency - Transition: 6MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 100MHz

• Manufacturer: onsemi

• Manufacturer: Nexperia USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223
• Power - Max: 650mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 550mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 150MHz

• Manufacturer: Microsemi Corporation
• Series: Military, MIL-PRF-19500/313
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 175°C (TJ)
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Supplier Device Package: TO-18 (TO-206AA)
• Power - Max: 360mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 10nA

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 160V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• Frequency - Transition: 300MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3
• Power - Max: 75W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 400V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• Frequency - Transition: 4MHz

• Manufacturer: STMicroelectronics
• Mounting Type: Chassis Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: ISOTOP
• Supplier Device Package: ISOTOP®
• Power - Max: 250W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50A
• Voltage - Collector Emitter Breakdown (Max): 450V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 32A, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.2V @ 6.4A, 32A

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TP-FA
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 8A
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 330MHz

• Manufacturer: Fairchild Semiconductor
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3 (TO-236)
• Power - Max: 250mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92 (TO-226)
• Power - Max: 625mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 300mA
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz

• Manufacturer: Sanken
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F
• Power - Max: 35W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 550V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1.8A, 4V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 360mA, 1.8A
• Current - Collector Cutoff (Max): 100µA (ICBO)
• Frequency - Transition: 6MHz