Transistors - Bipolar (BJT) - Single Pmax 150W | Transistors

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Found: 139

JANTX2N6051

TRANS PNP DARL 80V 12A TO-3

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/501
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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2SB1570

TRANS PNP DARL 150V 12A MT-200

Sanken
- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: 3-ESIP
- Supplier Device Package: MT-200
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 7A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 7mA, 7A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 50MHz
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MJH11022

TRANS NPN DARL 250V 15A SOT93

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 3MHz
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JANTX2N6059

TRANS NPN DARL 100V 12A TO204AA

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/502
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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2SA1943-O(Q)

TRANS PNP 230V 15A TO3P

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- Frequency - Transition: 30MHz
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2SC5200RTU

TRANS NPN 250V 17A TO264-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -50°C ~ 150°C (TJ)
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264-3
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 17A
- Voltage - Collector Emitter Breakdown (Max): 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 7A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- Frequency - Transition: 30MHz
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BU208A

TRANS NPN 700V 8A TO3

STMicroelectronics
- Manufacturer: STMicroelectronics
- Mounting Type: Chassis Mount
- Operating Temperature: 175°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 700V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 2A, 4.5A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 7MHz
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JANTX2N6052

TRANS PNP DARL 100V 12A TO-3

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/501
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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2SC5200

TRANS NPN 230V 15A TO264

STMicroelectronics
- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- Frequency - Transition: 30MHz
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KSC3552NTU

TRANS NPN 800V 12A TO3P

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 800V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 800mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 1.2A, 6A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 15MHz
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MJH11017G

TRANS PNP DARL 150V 15A TO247-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 3MHz
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BUH150G

POWER BIPOLAR TRANSISTOR, NPN

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Series: SWITCHMODE™
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 700V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 5V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 4A, 20A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 23MHz
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BU323Z

TRANS NPN DARL 350V 10A SOT93

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 2MHz
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2SC5200-O(Q)

TRANS NPN 230V 15A TO3P

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- Frequency - Transition: 30MHz
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2N6752

TRANS NPN 450V 10A TO3

Harris Corporation
- Manufacturer: Harris Corporation
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: TO-204AA
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 450V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 10A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 60MHz
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