- Power - Max
- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
-
- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: 3-ESIP
- Supplier Device Package: MT-200
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 60MHz
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/502
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/501
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-3
- Supplier Device Package: TO-3 (TO-204AA)
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: Harris Corporation
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 7A
- Voltage - Collector Emitter Breakdown (Max): 110V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 4A
- Current - Collector Cutoff (Max): 5mA
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- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/501
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-3
- Supplier Device Package: TO-3 (TO-204AA)
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: 3-ESIP
- Supplier Device Package: MT-200
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 50MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 3MHz
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 260V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 30MHz
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 500mA, 5A
- Frequency - Transition: 4MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 4V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 500µA
- Frequency - Transition: 20MHz
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- Manufacturer: STMicroelectronics
- Mounting Type: Chassis Mount
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30A
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
- Current - Collector Cutoff (Max): 10mA
- Frequency - Transition: 200kHz
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- Manufacturer: STMicroelectronics
- Mounting Type: Chassis Mount
- Operating Temperature: 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 16A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
- Current - Collector Cutoff (Max): 10mA
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 2MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A
- Current - Collector Cutoff (Max): 10mA
- Frequency - Transition: 200kHz
Info from the market- Total warehouses:
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- Offers in stock:
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- Manufacturer: STMicroelectronics
- Mounting Type: Surface Mount
- Operating Temperature: 175°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
- Current - Collector Cutoff (Max): 100µA
Info from the market- Total warehouses:
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- Offers in stock:
- 10
- 15
- 50
- 100