Transistors - Bipolar (BJT) - Single Pmax 100W | Transistors

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Found: 104

FJI5603DTU

TRANS NPN 800V 3A I2PAK

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 800V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200mA, 1A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 5MHz
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JANTX2N7371

TRANS PNP DARL 100V 0.001A TO254

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/623
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-254-3, TO-254AA (Straight Leads)
- Supplier Device Package: TO-254
- Power - Max: 100W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 1mA
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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BUH100G

TRANS NPN 400V 10A TO220

onsemi
- Manufacturer: onsemi
- Series: SWITCHMODE™
- Mounting Type: Through Hole
- Operating Temperature: -60°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 1.5A, 7A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 23MHz
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KSE13009FTU

POWER BIPOLAR TRANSISTOR NPN

Fairchild Semiconductor
- Manufacturer: Fairchild Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-3
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
- Frequency - Transition: 4MHz
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JAN2N7370

TRANS NPN DARL 100V 12A TO254

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/624
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-254-3, TO-254AA (Straight Leads)
- Supplier Device Package: TO-254AA
- Power - Max: 100W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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BUH100

POWER BIPOLAR TRANSISTOR, NPN

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Series: SWITCHMODE™
- Mounting Type: Through Hole
- Operating Temperature: -60°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 700V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 1.5A, 7A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 23MHz
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KSC5047TU

POWER BIPOLAR TRANSISTOR, NPN

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 120mA, 5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
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2STC4468

TRANS NPN 140V 10A TO3P

STMicroelectronics
- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 700mA, 7A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 20MHz
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2SC4468

TRANS NPN 140V 10A TO3P

Sanken
- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 20MHz
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BUH100G

POWER BIPOLAR TRANSISTOR, NPN

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Series: SWITCHMODE™
- Mounting Type: Through Hole
- Operating Temperature: -60°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 1.5A, 7A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 23MHz
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JANTXV2N7371

TRANS PNP DARL 100V 12A TO254

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/623
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-254-3, TO-254AA (Straight Leads)
- Supplier Device Package: TO-254AA
- Power - Max: 100W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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STD01P

TRANS PNP DARL 150V 10A TO3P-5L

Sanken
- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-5
- Supplier Device Package: TO-3P-5L
- Power - Max: 100W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 6A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 6mA, 6A
- Current - Collector Cutoff (Max): 100µA (ICBO)
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JAN2N7370

TRANS NPN DARL 100V 12A TO254AA

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/624
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-254-3, TO-254AA (Straight Leads)
- Supplier Device Package: TO-254AA
- Power - Max: 100W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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FJP13009TU

TRANS NPN 400V 12A TO220-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
- Frequency - Transition: 4MHz
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