Transistors - Bipolar (BJT) - Single Pmax 100mW | Transistors

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Found: 108

KTC4075-Y-TP

TRANS NPN 50V 0.15A SOT323

Micro Commercial Co
- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 80MHz
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FJZ733OTF

TRANS PNP 50V 0.15A SOT623F

Fairchild Semiconductor
- Manufacturer: Fairchild Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-623F
- Supplier Device Package: SOT-623F
- Power - Max: 100mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 180MHz
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DSC300100L

TRANS NPN 50V 0.1A SSSMINI3

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F2-B
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 150MHz
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HN1B04FE-GR,LXHF

AUTO AEC-Q PNP + NPN TR VCEO:-50

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
- Power - Max: 100mW
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 80MHz
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2SA1955FVATPL3Z

TRANS PNP 12V 0.4A CST3

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
- Power - Max: 100mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 400mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 130MHz
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2SC4215-O-TP

TRANS NPN 30V 0.02A SOT323

Micro Commercial Co
- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 550MHz
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2SC4116-Y,LF

TRANS NPN 50V 0.15A SC70

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 80MHz
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2SA1954BTE85LF

TRANS PNP 12V 0.5A SC70

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Power - Max: 100mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 130MHz
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2SA1586-GR,LF

TRANS PNP 50V 0.15A SC70

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Power - Max: 100mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 80MHz
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2SC594600L

TRANS NPN 20V 0.05A SSSMINI3

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F1
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 10V
- Frequency - Transition: 1.6GHz
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FJZ733OTF

TRANS PNP 50V 0.15A SOT623F

onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-623F
- Supplier Device Package: SOT-623F
- Power - Max: 100mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 180MHz
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HN4B01JE(TE85L,F)

TRANS NPN/PNP 50V 0.15A ESV PLN

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-553
- Supplier Device Package: ESV
- Power - Max: 100mW
- Transistor Type: NPN, PNP (Emitter Coupled)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10MA, 100MA
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 80MHz
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2SC4213-A(TE85L,F)

TRANS NPN 20V 0.3A SC70

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 30MHz
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2SC6026CTGRTPL3

TRANS NPN 50V 0.1A CST3

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 60MHz
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MMBT3906M-TP

TRANS PNP 40V 0.2A SOT883

Micro Commercial Co
- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SC-101, SOT-883
- Supplier Device Package: SOT-883
- Power - Max: 100mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA
- Frequency - Transition: 250MHz
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