Transistors - Bipolar (BJT) - Single Pmax 1.2W | Transistors

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Found: 238

ZTX953STOA

TRANS PNP 100V 3.5A E-LINE

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3.5A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 125MHz
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ZTX849

TRANS NPN 30V 5A E-LINE

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 100MHz
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JANTX2N5666S

TRANS NPN 200V 5A TO39

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/455
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
- Current - Collector Cutoff (Max): 200nA
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2N3947 PBFREE

TRANS NPN 40V 0.2A TO18

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Frequency - Transition: 300MHz
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ZTX849STOA

TRANS NPN 30V 5A E-LINE

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 100MHz
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BC869,115

TRANS PNP 20V 1A SOT89

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 140MHz
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ZTX955STOA

TRANS PNP 140V 3A E-LINE

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 110MHz
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KSC2690YSTU

TRANS NPN 120V 1.2A TO126-3

Fairchild Semiconductor
- Manufacturer: Fairchild Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 155MHz
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BF722,115

TRANS NPN 250V 0.1A SOT223

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
- Current - Collector Cutoff (Max): 10nA
- Frequency - Transition: 60MHz
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ZTX849STZ

TRANS NPN 30V 5A E-LINE

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 100MHz
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ZTX853STOA

TRANS NPN 100V 4A E-LINE

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 130MHz
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JANS2N5667S

TRANS NPN 300V 5A TO39

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/455
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
- Current - Collector Cutoff (Max): 200nA
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JANTXV2N5667S

TRANS NPN 300V 5A TO39

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/455
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
- Current - Collector Cutoff (Max): 200nA
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KSC2682YS

TRANS NPN 180V 0.1A TO126-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 180V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 200MHz
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CBCX68 TR PBFREE

TRANS NPN 20V 1A SOT89

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 65MHz
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