Transistors - Bipolar (BJT) - Single Pmax 1.2W | Transistors

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Found: 238

ZXTP2029FTA

TRANS PNP 100V 3A SOT23-3

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 20nA (ICBO)
- Frequency - Transition: 150MHz
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ZTX869

TRANS NPN 25V 5A E-LINE

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 100MHz
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DSS60601MZ4-13

TRANS NPN 60V 6A SOT223-3

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
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2SA1723

POWER BIPOLAR PNP TRANSISTOR

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 1.5GHz
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ZTX948STOB

TRANS PNP 20V 4.5A E-LINE

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4.5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Vce Saturation (Max) @ Ib, Ic: 310mV @ 300mA, 5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 80MHz
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CPH6501-TL-E

SMALL SIGNAL BIPOLAR TRANSISTOR

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-CPH
- Power - Max: 1.2W
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 225mV @ 15mA, 750mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 500MHz
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KSC2690AYSTU

TRANS NPN 160V 1.2A TO126-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 155MHz
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2SC18470Q

TRANS NPN 40V 1.5A TO126B-A1

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126B-A1
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 150MHz
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CXT5401E TR

TRANS PNP 220V 0.6A SOT89

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 220V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA
- Frequency - Transition: 300MHz
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CXT5401 TR PBFREE

TRANS PNP 150V 0.6A SOT89

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 300MHz
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ZTX958STOA

TRANS PNP 400V 0.5A E-LINE

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 200°C (TJ)
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
- Power - Max: 1.2W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 500mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 85MHz
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JANTXV2N5667S

TRANS NPN 300V 5A TO39

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/455
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
- Current - Collector Cutoff (Max): 200nA
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JANTXV2N5666S

TRANS NPN 200V 5A TO39

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/455
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
- Current - Collector Cutoff (Max): 200nA
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MN611S

TRANS NPN 115V 6A TO220S

Sanken
- Manufacturer: Sanken
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-220S
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 115 V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1A, 1V
- Vce Saturation (Max) @ Ib, Ic: 120mV @ 12mA, 1.2A
- Current - Collector Cutoff (Max): 10µA (ICBO)
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CXT5551E BK

TRANS NPN 220V 0.6A SOT89

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 220V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA
- Frequency - Transition: 300MHz
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