• Manufacturer: Rohm Semiconductor
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSMT6 (SC-95)
• Power - Max: 1.25W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 40mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126
• Power - Max: 1.25W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126
• Power - Max: 1.25W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126
• Power - Max: 1.25W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: SOT-223-8
• Supplier Device Package: SM8
• Power - Max: 1.25W
• Transistor Type: 2 NPN, 2 PNP (H-Bridge)
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: SOT-223-8
• Supplier Device Package: SM8
• Power - Max: 1.25W
• Transistor Type: 2 NPN, 2 PNP (H-Bridge)
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 70V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: Micro Commercial Co
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126
• Power - Max: 1.25W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: SOT-223-8
• Supplier Device Package: SM8
• Power - Max: 1.25W
• Transistor Type: 2 NPN, 2 PNP (H-Bridge)
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: Micro Commercial Co
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak
• Power - Max: 1.25W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 10µA
• Frequency - Transition: 90MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126-3
• Power - Max: 1.25W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-3
• Power - Max: 1.25W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 200V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
• Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
• Current - Collector Cutoff (Max): 50nA (ICBO)
• Frequency - Transition: 105MHz

• Manufacturer: Fairchild Semiconductor
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126
• Power - Max: 1.25W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100µA (ICBO)
• Frequency - Transition: 80MHz

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Power - Max: 1.25W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 140V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 260mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 50nA (ICBO)
• Frequency - Transition: 75MHz

• Manufacturer: Micro Commercial Co
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126
• Power - Max: 1.25W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: 50MHz

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-3
• Power - Max: 1.25W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 200nA
• Frequency - Transition: 200MHz