Transistors - Bipolar (BJT) - Single Pmax 1.1W | Transistors

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Found: 116

PBSS4032PT,215

TRANS PNP 30V 2.4A TO236AB

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
- Power - Max: 1.1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2.4A
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 160MHz
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APT13003SZTR-G1

TRANS NPN 450V 1.3A TO92

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
- Power - Max: 1.1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.3A
- Voltage - Collector Emitter Breakdown (Max): 450V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 250mA, 1A
- Frequency - Transition: 4MHz
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STSA851-AP

TRANS NPN 60V 5A TO92AP

STMicroelectronics
- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92AP
- Power - Max: 1.1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- Frequency - Transition: 130MHz
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NSVS50031SB3T1G

TRANS NPN 50V 3A 3CPH

onsemi
- Manufacturer: onsemi
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: 175°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CPH
- Power - Max: 1.1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- Frequency - Transition: 380MHz
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ZXT13P12DE6TC

TRANS PNP 12V 4A SOT23-6

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
- Power - Max: 1.1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 175mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 55MHz
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ZXTD2090E6TA

TRANS 2NPN 50V 1A SOT23-6

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
- Power - Max: 1.1W
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 10nA (ICBO)
- Frequency - Transition: 215MHz
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FJN3303TA

POWER BIPOLAR TRANSISTOR, NPN

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 1.1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 4MHz
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FJN3303BU

TRANS NPN 400V 1.5A TO92-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Power - Max: 1.1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 4MHz
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ZXT10N20DE6TC

TRANS NPN 20V 3.5A SOT23-6

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
- Power - Max: 1.1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3.5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 3.5A
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 140MHz
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PBSS305ND,115

TRANS NPN 100V 1A 6TSOP

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
- Power - Max: 1.1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 360mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 140MHz
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PBSS4032NT,215

TRANS NPN 30V 2.6A TO236AB

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
- Power - Max: 1.1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2.6A
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 180MHz
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PBSS301PD,115

TRANS PNP 20V 4A 6TSOP

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
- Power - Max: 1.1W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic: 420mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 80MHz
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ZXT13N50DE6TA

TRANS NPN 50V 4A SOT26

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
- Power - Max: 1.1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 180mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 115MHz
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PBSS304ND,115

TRANS NPN 80V 1A 6TSOP

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
- Power - Max: 1.1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 505mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 140MHz
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ZXT10N50DE6TC

TRANS NPN 50V 3A SOT23-6

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
- Power - Max: 1.1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 3A
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 165MHz
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