• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26
• Power - Max: 225mW
• Transistor Type: 2 PNP (Dual) Matched Pair
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Frequency - Transition: 250MHz

• Manufacturer: Microsemi Corporation
• Series: Military, MIL-PRF-19500/727
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39 (TO-205AD)
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 1000V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
• Current - Collector Cutoff (Max): 10nA (ICBO)

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Power - Max: 225mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 400MHz

• Manufacturer: Panjit International Inc.
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Power - Max: 225mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 15V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 400nA (ICBO)

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/397
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: U4
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-74, SOT-457
• Supplier Device Package: PG-SC74-6
• Power - Max: 330mW
• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• Frequency - Transition: 250MHz

• Manufacturer: Fairchild Semiconductor
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10nA (ICBO)

• Manufacturer: Diotec Semiconductor
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3 (TO-236)
• Power - Max: 250mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA
• Frequency - Transition: 250MHz

• Manufacturer: Micro Commercial Co
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 400V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 20mA, 20V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
• Current - Collector Cutoff (Max): 100µA (ICBO)
• Frequency - Transition: 8MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA

• Manufacturer: STMicroelectronics
• Mounting Type: Through Hole
• Operating Temperature: 175°C (TJ)
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Supplier Device Package: TO-18
• Power - Max: 390mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
• Current - Collector Cutoff (Max): 10nA
• Frequency - Transition: 200MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Frequency - Transition: 300MHz

• Manufacturer: onsemi
• Series: Automotive, AEC-Q101
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SC-75, SOT-416
• Power - Max: 200mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Frequency - Transition: 250MHz

• Manufacturer: Vishay General Semiconductor - Diodes Division
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• Power - Max: 625mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Frequency - Transition: 300MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 400mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz