• Manufacturer: Diodes Incorporated
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 200°C (TJ)
• Package / Case: E-Line-3
• Supplier Device Package: E-Line (TO-92 compatible)
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 150MHz

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/357
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: 3-SMD
• Power - Max: 1.5W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 175V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA

• Manufacturer: Nexperia USA Inc.
• Series: Automotive, AEC-Q101
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223
• Power - Max: 1.3W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 140MHz

• Manufacturer: STMicroelectronics
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92AP
• Power - Max: 1.5W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 400V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
• Current - Collector Cutoff (Max): 1mA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39
• Power - Max: 6W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92 (TO-226)
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-3
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 330MHz

• Manufacturer: NXP Semiconductors
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1010D-3
• Power - Max: 325mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 190MHz

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/357
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: UB
• Power - Max: 1.5W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 175V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Power - Max: 500mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 150V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: Toshiba Semiconductor and Storage
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS
• Power - Max: 2W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 230V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: Nexperia USA Inc.
• Series: Automotive, AEC-Q101
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 150V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 60mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 30MHz

• Manufacturer: Toshiba Semiconductor and Storage
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS
• Power - Max: 2W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 230V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• Frequency - Transition: 70MHz

• Manufacturer: Nexperia USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: 6-UFDFN Exposed Pad
• Supplier Device Package: 6-HUSON (2x2)
• Power - Max: 510mW
• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 120V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 480mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/485
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: U4
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 300V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
• Current - Collector Cutoff (Max): 1mA