• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363
• Power - Max: 200mW
• Transistor Type: NPN + Diode (Isolated)
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 18V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3
• Power - Max: 2W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
• Current - Collector Cutoff (Max): 200µA
• Frequency - Transition: 3MHz

• Manufacturer: Micro Commercial Co
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89
• Power - Max: 500mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 160MHz

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/348
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A
• Current - Collector Cutoff (Max): 100µA (ICBO)
• Frequency - Transition: 150MHz

• Manufacturer: Microsemi Corporation
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: 3-SMD
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 140V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/368
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39
• Power - Max: 800mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 350V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
• Current - Collector Cutoff (Max): 2µA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
• Supplier Device Package: TO-92 (TO-226)
• Power - Max: 625mW
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 55V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 200mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.1V @ 200µA, 200mA
• Current - Collector Cutoff (Max): 50nA
• Frequency - Transition: 150MHz

• Manufacturer: Nexperia USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223
• Power - Max: 1.4W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 100MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz

• Manufacturer: Microsemi Corporation
• Series: Military, MIL-PRF-19500/357
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 175V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA

• Manufacturer: Micro Commercial Co
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Power - Max: 30W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
• Current - Collector Cutoff (Max): 300µA
• Frequency - Transition: 3MHz

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/357
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: UB
• Power - Max: 1.5W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 175V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA

• Manufacturer: Infineon Technologies
• Series: Automotive, AEC-Q101
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: PG-SOT89
• Power - Max: 2W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 45V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 125MHz

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/357
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 175V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA

• Manufacturer: Diodes Incorporated
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-3
• Power - Max: 1W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz