- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 3MHz
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- Manufacturer: Microsemi Corporation
- Power - Max: 160W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 60V
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 130W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
- Power - Max: 200W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4A, 2V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 4A
- Current - Collector Cutoff (Max): 250µA
- Frequency - Transition: 2MHz
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- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
- Power - Max: 3.5W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 700µA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220ML
- Power - Max: 2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 195MHz
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 450V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 8A, 5V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 2.4A, 12A
- Current - Collector Cutoff (Max): 200µA
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- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 130W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 180V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 20MHz
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- Manufacturer: Bourns Inc.
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
- Power - Max: 3.5W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 4V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 2A, 10A
- Current - Collector Cutoff (Max): 700µA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 3MHz
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- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/525
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- Power - Max: 175W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 5A, 2V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 15A
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- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/538
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- Power - Max: 6W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
- Current - Collector Cutoff (Max): 1mA
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
- Power - Max: 150W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- Frequency - Transition: 30MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F-3SG
- Power - Max: 2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 195MHz
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Power - Max: 83W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 1V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 8A
- Frequency - Transition: 50MHz
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- Offers in stock:
- 10
- 15
- 50
- 100