• Manufacturer: STMicroelectronics
• Mounting Type: Through Hole
• Operating Temperature: 175°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• Power - Max: 155W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 350V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
• Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 12A
• Current - Collector Cutoff (Max): 100µA

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-204 (TO-3)
• Power - Max: 200W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 140V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4A, 2V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 4A
• Current - Collector Cutoff (Max): 250µA
• Frequency - Transition: 2MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264
• Power - Max: 200W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 260V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
• Current - Collector Cutoff (Max): 50µA (ICBO)
• Frequency - Transition: 30MHz

• Manufacturer: onsemi
• Series: SWITCHMODE™
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220
• Power - Max: 150W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 700V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 5V
• Vce Saturation (Max) @ Ib, Ic: 5V @ 4A, 20A
• Current - Collector Cutoff (Max): 100µA
• Frequency - Transition: 23MHz

• Manufacturer: Central Semiconductor Corp
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-3
• Power - Max: 115W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 70V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
• Current - Collector Cutoff (Max): 700µA
• Frequency - Transition: 2.5MHz

• Manufacturer: Microchip Technology
• Power - Max: 160W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 60V

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/538
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-3
• Power - Max: 6W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 400V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
• Current - Collector Cutoff (Max): 1mA (ICBO)

• Manufacturer: Sanken
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3PF
• Power - Max: 85W
• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 150V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 10A, 4V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 10A
• Current - Collector Cutoff (Max): 100µA (ICBO)
• Frequency - Transition: 45MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -50°C ~ 150°C (TJ)
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F-3
• Power - Max: 50W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 230V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
• Current - Collector Cutoff (Max): 5µA (ICBO)
• Frequency - Transition: 30MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-264-5
• Supplier Device Package: TO-264
• Power - Max: 180W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 260V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• Frequency - Transition: 30MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• Power - Max: 200W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 230V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7A, 5V
• Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 10A
• Current - Collector Cutoff (Max): 50µA (ICBO)
• Frequency - Transition: 30MHz

• Manufacturer: Toshiba Semiconductor and Storage
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-3PL
• Supplier Device Package: TO-3P(L)
• Power - Max: 150W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 230V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
• Current - Collector Cutoff (Max): 5µA (ICBO)
• Frequency - Transition: 30MHz

• Manufacturer: STMicroelectronics
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-218-3, TO-218AC
• Supplier Device Package: TO-218-3
• Power - Max: 130W
• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
• Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
• Current - Collector Cutoff (Max): 1mA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220
• Power - Max: 83W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 1V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
• Frequency - Transition: 50MHz

• Manufacturer: Nexperia USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 175°C (TJ)
• Package / Case: SC-100, SOT-669
• Supplier Device Package: LFPAK56, Power-SO8
• Power - Max: 1.5W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 850mV @ 1.5A, 15A
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 80MHz