Transistors - Bipolar (BJT) - Single IC(MAX) 12A | Transistors

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Found: 142

2SD1047P-E

TRANS NPN 140V 12A TO3PB

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PB
- Power - Max: 120W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 15MHz
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FJA13009TU

TRANS NPN 400V 12A TO3P

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 130W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
- Frequency - Transition: 4MHz
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2N6059

T-NPN SI-DARLINGTON AMP

NTE Electronics, Inc
- Manufacturer: NTE Electronics, Inc
- Mounting Type: Chassis Mount
- Operating Temperature: 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
- Frequency - Transition: 4MHz
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JANTX2N6051

TRANS PNP DARL 80V 12A TO-3

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/501
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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2SB1570

TRANS PNP DARL 150V 12A MT-200

Sanken
- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: 3-ESIP
- Supplier Device Package: MT-200
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 7A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 7mA, 7A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 50MHz
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JANTX2N6059

TRANS NPN DARL 100V 12A TO204AA

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/502
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- Power - Max: 150W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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2SB1351

TRANS PNP DARL 60V 12A TO220F

Sanken
- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
- Power - Max: 30W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 10A, 4V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 10A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 130MHz
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BUL98

TRANS NPN 450V 12A TO220

STMicroelectronics
- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Power - Max: 110W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 450V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.4A, 12A
- Current - Collector Cutoff (Max): 100µA
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JANTX2N6052

TRANS PNP DARL 100V 12A TO-3

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/501
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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KSC3552NTU

TRANS NPN 800V 12A TO3P

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 800V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 800mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 1.2A, 6A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 15MHz
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FJP13009

POWER BIPOLAR TRANSISTOR, NPN

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
- Frequency - Transition: 4MHz
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ST2310FX

TRANS NPN 600V 12A ISOWATT-218FX

STMicroelectronics
- Manufacturer: STMicroelectronics
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: ISOWATT218FX
- Supplier Device Package: ISOWATT-218FX
- Power - Max: 65W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 600V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 6.5 @ 7A, 5V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1.75A, 7A
- Current - Collector Cutoff (Max): 1mA
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FJAFS1720TU

TRANS NPN 800V 12A TO3PF

Fairchild Semiconductor
- Manufacturer: Fairchild Semiconductor
- Series: ESBC™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 125°C (TJ)
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF
- Power - Max: 60W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 800V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8.5 @ 11A, 5V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 3.33A, 10A
- Current - Collector Cutoff (Max): 100µA
- Frequency - Transition: 15MHz
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BDW93

POWER BIPOLAR TRANSISTOR, NPN

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 80W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA
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2N6052G

TRANS PNP DARL 100V 12A TO204

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
- Power - Max: 150W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
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