• Manufacturer: NXP Semiconductors
• Mounting Type: Surface Mount
• Operating Temperature: 175°C (TJ)
• Package / Case: SC-100, SOT-669
• Supplier Device Package: LFPAK56, Power-SO8
• Power - Max: 1.3W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 460mV @ 500mA, 10A
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 128MHz

• Manufacturer: Microsemi Corporation
• Series: Military, MIL-PRF-19500/394
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 170V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
• Current - Collector Cutoff (Max): 10µA

• Manufacturer: STMicroelectronics
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-218-3
• Supplier Device Package: TO-218
• Power - Max: 125W
• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
• Current - Collector Cutoff (Max): 2mA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220
• Power - Max: 2W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (Max): 10µA
• Frequency - Transition: 50MHz

• Manufacturer: NTE Electronics, Inc
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-218-3
• Supplier Device Package: TO-218
• Power - Max: 125W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V

• Manufacturer: STMicroelectronics
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• Power - Max: 80W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
• Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
• Current - Collector Cutoff (Max): 700µA
• Frequency - Transition: 3MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP
• Power - Max: 2W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 90V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: 2MHz

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/621
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-254-3, TO-254AA (Straight Leads)
• Supplier Device Package: TO-254AA
• Power - Max: 115W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
• Current - Collector Cutoff (Max): 5mA

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/394
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5
• Power - Max: 1W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 70V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
• Current - Collector Cutoff (Max): 10µA

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak
• Power - Max: 1.75W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 60V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
• Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
• Current - Collector Cutoff (Max): 50µA
• Frequency - Transition: 2MHz

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK
• Power - Max: 150W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 350V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
• Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
• Current - Collector Cutoff (Max): 100µA
• Frequency - Transition: 2MHz

• Manufacturer: Sanken
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3P
• Power - Max: 100W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 140V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• Frequency - Transition: 20MHz

• Manufacturer: NTE Electronics, Inc
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-218-3
• Supplier Device Package: TO-218
• Power - Max: 80W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 80V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
• Frequency - Transition: 3MHz

• Manufacturer: Bourns Inc.
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-218-3
• Supplier Device Package: SOT-93
• Power - Max: 3W
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 10A, 4V
• Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
• Current - Collector Cutoff (Max): 700µA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3
• Power - Max: 70W
• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 100V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
• Current - Collector Cutoff (Max): 500µA