Transistors - Bipolar (BJT) - Single IC(MAX) 10A | Transistors

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Found: 560

JANTXV2N5237

TRANS NPN 120V 10A TO-5

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/394
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
- Current - Collector Cutoff (Max): 10µA
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FJA4310OTU

TRANS NPN 140V 10A TO3P

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 100W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 30MHz
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JANTX2N4150S

TRANS NPN 70V 10A TO39

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/394
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 70V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
- Current - Collector Cutoff (Max): 10µA
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MJE2955TTU

TRANS PNP 60V 10A TO220-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 75W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 700µA
- Frequency - Transition: 2MHz
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NJW44H11G

TRANS NPN 80V 10A TO3P-3L

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P-3L
- Power - Max: 120W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 4A, 2V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 85MHz
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TIP34A

TRANS PNP 60V 10A TO218

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-218-3
- Supplier Device Package: TO-218
- Power - Max: 80W
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
- Frequency - Transition: 3MHz
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2SD2439

TRANS NPN DARL 150V 10A TO3PF

Sanken
- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF
- Power - Max: 80W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 7A, 4V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 7mA, 7A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- Frequency - Transition: 55MHz
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2SB1259

TRANS PNP DARL 120V 10A TO220F

Sanken
- Manufacturer: Sanken
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
- Power - Max: 30W
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 4V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 100MHz
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D44H11

TRANS NPN 80V 10A TO220-3

Harris Corporation
- Manufacturer: Harris Corporation
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 50MHz
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JANTXV2N3999

TRANS NPN 80V 10A TO59

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/374
- Mounting Type: Chassis, Stud Mount
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-210AA, TO-59-4, Stud
- Supplier Device Package: TO-59
- Power - Max: 2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA
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KSC5024RTU

TRANS NPN 500V 10A TO3PN

Fairchild Semiconductor
- Manufacturer: Fairchild Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
- Power - Max: 90W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 800mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 4A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- Frequency - Transition: 18MHz
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KSE44H11TU

TRANS NPN 80V 10A TO220-3

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Power - Max: 1.67W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- Frequency - Transition: 50MHz
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2N3716 PBFREE

TRANS NPN 80V 10A TO3

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 500mA, 5A
- Frequency - Transition: 4MHz
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CJD3055 TR13 PBFREE

TRANS NPN 60V 10A DPAK

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Power - Max: 1.75W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
- Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
- Current - Collector Cutoff (Max): 50µA
- Frequency - Transition: 2MHz
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JANTXV2N4150S

TRANS NPN 70V 10A TO-39

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/394
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 70V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
- Current - Collector Cutoff (Max): 10µA
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